FGH60N60
QR25.00
GBT - Field Stop 600 V, 60 A FGH60N60SM D Description Using novel field stop IG BT technology, ON Semiconductor’s new series of field stop 2nd generation IG BTs offer the optimum performance for s olar inverter, UPS, welder, telecom, ES S and PFC applications where low conduc tion and switching losses are essential .
Features
• Maximum Junction Tempera ture: TJ = 175°C
• Positive Temperat ure Co−efficient for easy Parallel Op erating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
9 V (Typ.
) @ IC = 60 A
• High Input Im pedance
• Fast Switching: EOFF = 7.
5 uJ/A
• Tightened Parameter Dist .
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